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The silicon-based LED chip is a vertical structure chip, which has the characteristics of good light-emitting appearance, excellent heat dissipation, high-current driving, and high ceramic packaging efficiency. The silicon-based LED chip uses the silver mirror vertical structure technology. Compared with the sapphire LED chip with ITO horizontal structure, it has the advantages of good heat dissipation and good current expansion. The same size LED chip, the normal working current of the vertical structure can be compared with ITO. The horizontal structure is much higher, so the chip output per unit area is higher. The number of vertical structure LED chips required for lamps of the same total lumens is small, which is a major factor in cost reduction. At present, Jingneng Optoelectronics is developing mass production technology for 6-inch GaN/Si technology. The 45 mil silicon-based high-power LED chip developed with 6-inch silicon substrate can achieve a light efficiency of 120 lm/W.
Dr. Zhao Hanming pointed out that the current sapphire substrate LED technology is very mature. 99% of the world's companies use this technology to manufacture LEDs; silicon carbide substrate LED technology is mainly used by Cree, and the technology is relatively mature; The bottom has the most potential, but it is also the hardest. Since its inception in 2006, Jingneng Optoelectronics has focused on the research and development of silicon-based LED chips, and is currently the world's first company to bring silicon-based LED products to market.
It is reported that Jingneng Optoelectronics has launched these four products at the launch conference of a new generation of high-power silicon-based LED chip products held at Shangri-La Hotel, Guangzhou. The luminous efficiency of 45mil silicon-based high-power LED chips can reach 120lm/W. 
Crystal energy photoelectric silicon-based LED chip light efficiency exceeds 130lm/w
Recently, Dr. Zhao Hanming, CTO of Crystal Energy, reported the latest progress of silicon-based LEDs in the United States. The luminous efficiency of Crystal Energy Optoelectronic 45mil silicon-based high-power LED chip has been increased to 130lm/W, the blue light power can be up to 615mW after product packaging, and the white light luminous flux can reach up to 145lm, while the 55mil silicon-based high-power LED chip can achieve luminous efficiency. 140lm/W.