Since the beginning of this year, the government's policy of providing sacrifices has provided fertile ground for the OLED panel industry, and it is still possible for mainland enterprises to grow and thrive under the attack of foreign companies. In order to promote the development of the OLED industry in China, the State Council issued the “Industrial Transformation and Upgrading Plan (2011-2015)†in early January, setting the OLED industry as a key development object. Wang Bohua, Director of the Electronic Information Product Management Division of the Ministry of Industry and Information Technology, pointed out that the government is providing financial support for technology development to support the development of the OLED industry, accelerate the expansion of mass production of small and medium-sized OLED panels, and promote the development of large-size OLED panels. The Ministry of Industry and Information Technology has also recently built a new station area in Hefei, which is to be used as a national new industrialization demonstration base for electronic information (new lithographic display), with a focus on supporting panel technology, including OLED. This is the first time that China has incorporated the new flat panel display industry into the “national new industrialization industryâ€. Nanjing also set up a special community for Zijin Technology Entrepreneurship to take advantage of its policy to serve the OLED industry. Wang Bohua said that Taiwan is an important OLED R&D base in the world, and the prospects for cross-strait cooperation are good. The future will promote the development of cross-strait OLED industry. Chen Jinxin, deputy secretary-general of China OLED Industry Alliance, said at the AMOLED industry development forum on the two sides of the Taiwan Straits at the end of March that Samsung is at the forefront of OLED technology, but "five-star" (referring to China) is working together to show the determination to develop OLED in China. . Metal oxide semiconductor field effect (MOS) transistors can be divided into N-channel and P-channel. P-channel silicon MOS field-effect transistors have two P+ regions on the N-type silicon substrate, which are called source and The drain is not conductive between the two poles, and when a sufficient positive voltage (gate ground) is applied to the source, the surface of the N-type silicon under the gate exhibits a P-type inversion layer, which becomes a channel connecting the source and the drain. . Changing the gate voltage changes the density of the holes in the channel, thereby changing the resistance of the channel. Such a MOS Field Effect Transistor is called a P-channel enhancement type field effect transistor. If the surface of the N-type silicon substrate is free of gate voltage, the P-type inversion layer channel already exists, and the appropriate bias voltage can increase or decrease the resistance of the channel. Such a MOS field effect transistor is referred to as a P-channel depletion field effect transistor. They are collectively referred to as PMOS transistors. P Channel Mosfet,P Channel Power Mosfet,Field Effect Transistor,Field Effect Transistor Symbol Dongguan Agertech Technology Co., Ltd. , https://www.agertechcomponents.com