Japan NGK develops super bright LED epitaxial wafers by liquid phase epitaxial growth technology

NGKInsulators Ltd (NGK), based in Nagoya, Japan, exhibited for the first time its new product, the ultra-bright LED epitaxial wafer, which has been developed since its inception.

Based on the original liquid phase epitaxial growth technology (LPE), NGK has developed a new gallium nitride (GaN) single crystal epitaxial wafer with low defect density and high transparency. Its high-efficiency luminescence is suitable for commercial projectors and headlights, and will be used in hybrid vehicles in the future.


 

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