Fairchild Introduces Silicon Carbide Technology to Expand Product Innovation

In order to meet the demand for improved efficiency and performance in semiconductor applications, Fairchild Semiconductor, the world's leading provider of high-performance power and portable products, announced the acquisition of TranSiC Corporation, a Silicon Carbide (SiC) power transistor company, to expand its leading position. technical skills.

This acquisition brings to Fairchild the proven efficiency of industry-leading bipolar SiC transistor technology, outstanding performance over a wide temperature range, and superior performance beyond MOSFET and JFET technology. At the same time, Fairchild acquired an experienced team of SiC engineers and scientists, as well as a number of SiC technology patents.

Mark Thompson, chairman, president, and chief executive officer of Fairchild Semiconductor, said: "We have the strength to combine SiC technology with Fairchild's existing capabilities in MOSFETs, IGBTs and multi-chip modules, and our global customer base. Continue to be a leader in innovative, high performance power transistor technology."

Dan Kinzer, chief technology officer of Fairchild Semiconductor, said: "The high performance level of SiC technology can greatly improve the power conversion efficiency. It also provides a higher conversion speed, can achieve a smaller terminal system form factor. Silicon carbide technology in the market has It has a certain position, especially in the area of ​​wide band gap, it is suitable for applications requiring voltages above 600V, and demonstrates excellent robustness and reliability."

The advantages of SiC technology over other technologies include:
·Low on-state voltage drop at a specific chip size ·High current density ·High operating temperature ·Lowest thermal impedance ·With only majority carrier conduction and ultra-fast switching speed · Use a normal off-mode operation with a current gain range of 100 to provide a simple drive solution. • Since positive-temperature-resistor components are used, they can be conveniently connected in parallel. In addition, the impedance of these devices is very close to the theoretical limit of SiC technology. , and successfully demonstrated the 50A switch operation at 800V within 25ns of turn-on and turn-off time. These devices have parametric stability over long-term full-bias current and current stress conditions.

These high-gain SiC bipolar devices are suitable for high power conversion applications in down-drilling, solar inverters, wind power inverters, electrical and hybrid vehicles, industrial drives, UPS, and light rail traction applications. Yole Development, a market research organization, expects these markets will reach a scale of nearly one billion U.S. dollars by 2020.

The device's industry-leading efficiency can reduce the associated losses of mature silicon technology devices by up to 50%, or up to four times in frequency under the same loss conditions. SiC devices have significantly reduced size, fewer passive components, and can reduce overall system cost and increase value. For systems that require the highest efficiency and power density, this device is the unmatched product of choice.

Fairchild is sampling samples of 1200V initial products with a rated current of up to 50A for target applications, and will develop products with a wider voltage and current range in the future and continue to promote energy conservation.